

Manufacturer Part #
IRF740PBF-BE3
400V,10A,550MOHM,TO-220 - COO: TAIWAN
Product Specification Section
Vishay IRF740PBF-BE3 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/23/2025 Details and Download
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel. Products manufactured at Newport will be identified by a ?R? in the fourth position of the date code marked on the 2nd line of the partReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel
Part Status:
Active
Active
Vishay IRF740PBF-BE3 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 400V |
Drain-Source On Resistance-Max: | 0.55Ω |
Rated Power Dissipation: | 125W |
Qg Gate Charge: | 63nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 10A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 50ns |
Rise Time: | 27ns |
Fall Time: | 24ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Input Capacitance: | 1400pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
1
$0.86
40
$0.84
150
$0.815
500
$0.795
2,000+
$0.755
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole