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Infineon | KIT_CMOS7_G6_SIC_DIODE

Manufacturer Part #

KIT_CMOS7_G6_SIC_DIODE

Coolmos7 + Gen6 SiC Diode sample box for customer go-wider
ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1818
Product Specification Section
Infineon KIT_CMOS7_G6_SIC_DIODE - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 1000W
Qg Gate Charge: 430nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 320A
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: TrenchMOS
Input Capacitance: 26µF
Series: TrenchT2TM HiperFETTM
Package Style:  TO-268 (D3PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3
USA:
3
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$367.50
USD
Quantity
Unit Price
1
$367.50
3
$361.76
5
$359.12
10
$355.56
20+
$350.00
Product Variant Information section