KIT_CMOS7_G6_SIC_DIODE in Bulk by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. KIT_CMOS7_G6_SIC_DIODE

Infineon | KIT_CMOS7_G6_SIC_DIODE

Manufacturer Part #

KIT_CMOS7_G6_SIC_DIODE

Coolmos7 + Gen6 SiC Diode sample box for customer go-wider
ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1818
Product Specification Section
Infineon KIT_CMOS7_G6_SIC_DIODE - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 1000W
Qg Gate Charge: 430nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 320A
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: TrenchMOS
Input Capacitance: 26µF
Series: TrenchT2TM HiperFETTM
Package Style:  TO-268 (D3PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3
USA:
3
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$367.50
USD
Quantity
Unit Price
1
$367.50
3
$361.76
5
$359.12
10
$355.56
20+
$350.00
Product Variant Information section