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Manufacturer Part #

IRF7413ZTRPBF

Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET® Power Mosfet - SOIC-8

Product Specification Section
Infineon IRF7413ZTRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 9.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 8.7ns
Turn-off Delay Time: 11ns
Rise Time: 6.3ns
Fall Time: 3.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 1210pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The IRF7413ZTRPBF is a Single N-Channel Hexfet Power Mosfet, available in surface mount SOIC-8 package.

Benefits:

  • Ultra-Low Gate Impedance
  • Very Low RDS(on)
  • Fully Characterized Avalanche Voltage and Current
  • 100% Tested for RG
  • Lead-Free

Applications:

  • Control FET for Notebook Processor Power
  • Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$800.00
USD
Quantity
Unit Price
4,000
$0.20
8,000
$0.199
12,000
$0.198
16,000
$0.197
20,000+
$0.194