IRFB52N15DPBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFB52N15DPBF

Manufacturer Part #

IRFB52N15DPBF

Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2430
Product Specification Section
Infineon IRFB52N15DPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 32mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 89nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 51A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 28ns
Rise Time: 47ns
Fall Time: 25ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 2770pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
150
USA:
150
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.14
USD
Quantity
Unit Price
1
$1.14
40
$1.12
150
$1.10
400
$1.09
1,500+
$1.06
Product Variant Information section