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Infineon | IRF3710ZPBF

Manufacturer Part #

IRF3710ZPBF

Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF3710ZPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 160W
Qg Gate Charge: 82nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 59A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 41ns
Rise Time: 77ns
Fall Time: 56ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 2900pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$670.00
USD
Quantity
Unit Price
1
$0.725
50
$0.71
250
$0.69
1,000
$0.67
4,000+
$0.635
Product Variant Information section