SI1308EDL-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Vishay | SI1308EDL-T1-GE3

Manufacturer Part #

SI1308EDL-T1-GE3

Single N-Channel 30 V 0.4 W 4.1 nC Silicon Surface Mount Mosfet - SOT-323

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2311
Product Specification Section
Vishay SI1308EDL-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.185Ω
Rated Power Dissipation: 0.4W
Qg Gate Charge: 4.1nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 1.5A
Turn-on Delay Time: 2ns
Turn-off Delay Time: 8ns
Rise Time: 20ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: Si
Height - Max: 1mm
Length: 2.2mm
Input Capacitance: 105pF
Package Style:  SOT-323 (SC-70)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
9,000
USA:
9,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$295.80
USD
Quantity
Unit Price
3,000
$0.0986
6,000
$0.097
9,000
$0.096
15,000
$0.0948
30,000+
$0.0923
Product Variant Information section