DMN6066SSS-13 in Reel by Diodes Incorporated | Mosfets | Future Electronics
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Manufacturer Part #

DMN6066SSS-13

DMN6066 Series N-Channel 60 V 66 mOhm SMT Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Diodes Incorporated DMN6066SSS-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 66mΩ
Rated Power Dissipation: 1.56W
Qg Gate Charge: 10.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.7A
Turn-on Delay Time: 2.7ns
Turn-off Delay Time: 14.7ns
Rise Time: 2.4ns
Fall Time: 5.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 502pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$562.50
USD
Quantity
Unit Price
2,500
$0.225
5,000
$0.22
12,500+
$0.215
Product Variant Information section