text.skipToContent text.skipToNavigation

Manufacturer Part #

STB6N60M2

STB6N60M2 Series 650 V 1.2 Ohm 4.5 A N-Channel MDmesh™ M2 Power Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1317
Product Specification Section
STMicroelectronics STB6N60M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 60|W
Qg Gate Charge: 8nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$685.00
USD
Quantity
Unit Price
1,000
$0.685
2,000
$0.675
3,000
$0.67
5,000
$0.665
10,000+
$0.65
Product Variant Information section