BSC098N10NS5ATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

BSC098N10NS5ATMA1

Single N-Channel 100 V 9.8 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2333
Product Specification Section
Infineon BSC098N10NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 9.8mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 22nC
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
55,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,950.00
USD
Quantity
Unit Price
5,000+
$0.39
Product Variant Information section