
Manufacturer Part #
IRF9540NSTRLPBF
Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
Infineon IRF9540NSTRLPBF - Product Specification
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Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Part Status:
Infineon IRF9540NSTRLPBF - Technical Attributes
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 117mΩ |
Rated Power Dissipation: | 3.1W |
Qg Gate Charge: | 73nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 23A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 40ns |
Rise Time: | 64ns |
Fall Time: | 45ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Input Capacitance: | 1450pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount