DMT3009LFVW-7 in Reel by Diodes Incorporated | Mosfets | Future Electronics
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Manufacturer Part #

DMT3009LFVW-7

MOSFET MOSFET BVDSS 25V-30V

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2515
Product Specification Section
Diodes Incorporated DMT3009LFVW-7 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 3.1W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 3.2ns
Turn-off Delay Time: 8.9ns
Rise Time: 5.2ns
Fall Time: 1.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Input Capacitance: 823pF
Package Style:  POWERDI3333-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
8,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$430.00
USD
Quantity
Unit Price
2,000
$0.215
4,000
$0.21
10,000+
$0.205
Product Variant Information section