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Manufacturer Part #
FDS4935BZ
Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2511 | ||||||||||
Product Specification Section
onsemi FDS4935BZ - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi FDS4935BZ - Technical Attributes
Attributes Table
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 35mΩ |
| Rated Power Dissipation: | 1.6W |
| Qg Gate Charge: | 40nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 6.9A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 68ns |
| Rise Time: | 23ns |
| Fall Time: | 61ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Input Capacitance: | 1360pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Features & Applications
The FDS4935BZ 30 V 22 mΩ Dual P-Channel MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V).
Features:
- -7 A, -30 V
- RDS(ON) = 23 mΩ @ VGS = -10 V
- RDS(ON) = 35 mΩ @ VGS = -4.5 V
- Low gate charge (15nC typical)
- Fast switching speed
- High performance trench technology for extremelylow RDS(ON)
- High power and current handling capability
Applications:
- Inverter
- Power Supplies
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
2,500
$0.29
5,000
$0.285
25,000+
$0.275
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount