Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IRLR110PBF
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2314 | ||||||||||
Vishay IRLR110PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLR110PBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/8003582
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLR110PBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/8003582
Vishay IRLR110PBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 540mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 6.1nC |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount