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STMicroelectronics | STF10NM60N

Manufacturer Part #

STF10NM60N

N-Channel 600 V 0.55 Ohm 19 nC Through Hole MDmesh™ II Power Mosfet - I2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STF10NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.55Ω
Rated Power Dissipation: 25W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 32ns
Rise Time: 12ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 540pF
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,600.00
USD
Quantity
Unit Price
50
$1.64
200
$1.62
750
$1.60
1,500
$1.58
3,750+
$1.56
Product Variant Information section