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Manufacturer Part #
IPG20N06S4L11ATMA1
OptiMOS Series 60V 20A 11.2mΩ Logic‑Level Dual N‑Channel 65W Mosfet PG‑TDSON‑8‑4
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:5000 per Reel Mounting Method:Surface Mount |
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Product Specification Section
Infineon IPG20N06S4L11ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries.
See List
Item cannot ship to following countries:
Austria
HTS Code:
8541.29.00.65
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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Infineon IPG20N06S4L11ATMA1 - Technical Attributes
Attributes Table
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 11.2mΩ |
| Rated Power Dissipation: | 65|W |
| Qg Gate Charge: | 41nC |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
5,000+
$1.44
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount