text.skipToContent text.skipToNavigation

Manufacturer Part #

IPG20N06S4L11ATMA1

IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS™-T2 Power-Transistor - PG-TDSON-8-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPG20N06S4L11ATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 11.2mΩ
Rated Power Dissipation: 65|W
Qg Gate Charge: 41nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,725.00
USD
Quantity
Unit Price
5,000+
$0.745
Product Variant Information section