Manufacturer Part #
IRF7380TRPBF
Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount |
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| Date Code: | 2540 | ||||||||||
Infineon IRF7380TRPBF - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRF7380TRPBF - Technical Attributes
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 73mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 15nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.6A |
| Turn-on Delay Time: | 9ns |
| Turn-off Delay Time: | 41ns |
| Rise Time: | 10ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 660pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Features & Applications
Benefits:
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design
- Fully Characterized Avalanche Voltage and Current
Applications:
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount