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Infineon Technologies | IRF7380TRPBF

Manufacturer Part #

IRF7380TRPBF

Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8

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Mfr. Name: Infineon Technologies
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Product Specification Section
Infineon Technologies IRF7380TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 73mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.6A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 41ns
Rise Time: 10ns
Fall Time: 17ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 660pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The IRF7380TRPBF is a Single N-Channel Hexfet Power Mosfet, available in surface mount SOIC-8 package.

Benefits:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • High frequency DC-DC converters
  • Lead-Free
    Pricing Section
    Global Stock:
    0
    USA:
    0
    On Order:
    0
    Factory Stock:Factory Stock:
    0
    Factory Lead Time:
    43 Weeks
    Minimum Order:
    4000
    Multiple Of:
    4000
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    Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
    Total
    $1,580.00
    USD
    Quantity
    Unit Price
    4,000
    $0.395
    8,000
    $0.39
    20,000+
    $0.38
    Product Variant Information section