BSC077N12NS3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

BSC077N12NS3GATMA1

Single N-Channel 120 V 7.7 mOhm 88 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2332
Product Specification Section
Infineon BSC077N12NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 7.7mΩ
Rated Power Dissipation: 139|W
Qg Gate Charge: 66nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 98A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 26ns
Rise Time: 8ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 4300pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$6,000.00
USD
Quantity
Unit Price
5,000+
$1.20