IPB025N10N3GATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPB025N10N3GATMA1

Single N-Channel 100 V 2.5 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2418
Product Specification Section
Infineon IPB025N10N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.5mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 155nC
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,290.00
USD
Quantity
Unit Price
1,000+
$2.29