
Manufacturer Part #
SPD04N80C3ATMA1
Single N-Channel 800 V 1.3 Ohm 31 nC CoolMOS™ Power Mosfet - TO-252-3
Product Specification Section
Infineon SPD04N80C3ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Assembly Site/Material Change
03/07/2022 Details and Download
Part Status:
Active
Active
Infineon SPD04N80C3ATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 800V |
Drain-Source On Resistance-Max: | 1300mΩ |
Rated Power Dissipation: | 63W |
Qg Gate Charge: | 23nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 4A |
Turn-on Delay Time: | 25ns |
Turn-off Delay Time: | 72ns |
Rise Time: | 15ns |
Fall Time: | 12ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | CoolMOS |
Input Capacitance: | 570pF |
Package Style: | TO-252-3 (DPAK) |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Lead Time:
15 Weeks
Quantity
Unit Price
2,500
$0.535
5,000
$0.53
7,500
$0.525
10,000
$0.52
12,500+
$0.515
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount