SPD04N80C3ATMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

SPD04N80C3ATMA1

Single N-Channel 800 V 1.3 Ohm 31 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2449
Product Specification Section
Infineon SPD04N80C3ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1300mΩ
Rated Power Dissipation: 63W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 72ns
Rise Time: 15ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 570pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,337.50
USD
Quantity
Unit Price
2,500
$0.535
5,000
$0.53
7,500
$0.525
10,000
$0.52
12,500+
$0.515
Product Variant Information section