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Infineon | IRFB4332PBF

Manufacturer Part #

IRFB4332PBF

Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2329
Product Specification Section
Infineon IRFB4332PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 33mΩ
Rated Power Dissipation: 390|W
Qg Gate Charge: 99nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2
Multiple Of:
1
Total
$5.94
USD
Quantity
Unit Price
10
$2.97
40
$2.93
125
$2.89
400
$2.85
1,250+
$2.78
Product Variant Information section