IRFB4332PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFB4332PBF

Manufacturer Part #

IRFB4332PBF

Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2329
Product Specification Section
Infineon IRFB4332PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 33mΩ
Rated Power Dissipation: 390|W
Qg Gate Charge: 99nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.33
USD
Quantity
Unit Price
1
$1.33
40
$1.31
125
$1.30
400
$1.28
1,250+
$1.25
Product Variant Information section