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Manufacturer Part #

IRFB4332PBF

Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IRFB4332PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 33mΩ
Rated Power Dissipation: 390|W
Qg Gate Charge: 99nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$75.50
USD
Quantity
Unit Price
50
$1.51
200
$1.49
750
$1.47
1,500
$1.46
3,750+
$1.44