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Référence fabricant
IRF9Z24NPBF
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-220-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2432 | ||||||||||
Infineon IRF9Z24NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
Infineon IRF9Z24NPBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.175Ω |
| Rated Power Dissipation: | 45W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 12A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 23ns |
| Rise Time: | 55ns |
| Fall Time: | 37ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 350pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole