SI4100DY-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Manufacturer Part #

SI4100DY-T1-GE3

Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2309
Product Specification Section
Vishay SI4100DY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 63mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 13.5nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
7,500
USA:
7,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,262.50
USD
Quantity
Unit Price
2,500
$0.505
5,000
$0.50
7,500
$0.495
10,000
$0.49
12,500+
$0.485
Product Variant Information section