IRF7853TRPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF7853TRPBF

Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2422
Product Specification Section
Infineon IRF7853TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 39nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.3A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 26ns
Rise Time: 6.6ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.9V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1640pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The IRF7853TRPBF is a single N-Channel 100 V 2.5 W 28nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters
  • Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
  • Secondary Side Synchronous Rectification Switch for 15 Vout
  • Suitable for 48 V Non-Isolated Synchronous Buck DC-DC Applications
Read More...
Pricing Section
Global Stock:
16,000
USA:
16,000
80,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,600.00
USD
Quantity
Unit Price
4,000
$0.40
8,000+
$0.39
Product Variant Information section