
Manufacturer Part #
IRF7853TRPBF
Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8
Product Specification Section
Infineon IRF7853TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
ADVISORY
11/14/2022 Details and Download
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Active
Active
Infineon IRF7853TRPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 39nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 8.3A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 26ns |
Rise Time: | 6.6ns |
Fall Time: | 6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4.9V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 1640pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
Features & Applications
Pricing Section
Global Stock:
16,000
USA:
16,000
Factory Lead Time:
18 Weeks
Quantity
Unit Price
4,000
$0.40
8,000+
$0.39
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount