
Manufacturer Part #
IRFR220NTRPBF
Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA
Infineon IRFR220NTRPBF - Product Specification
Shipping Information:
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PCN Information:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRFR220NTRPBF - Technical Attributes
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 600mΩ |
Rated Power Dissipation: | 43|W |
Qg Gate Charge: | 15nC |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252AA
Mounting Method:
Surface Mount