IRFS4227TRLPBF in Reel by Infineon | Mosfets | Future Electronics
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Infineon | IRFS4227TRLPBF

Manufacturer Part #

IRFS4227TRLPBF

Single N-Channel 200V 26 mOhm 98 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2347
Product Specification Section
Infineon IRFS4227TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 330W
Qg Gate Charge: 98nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 62A
Turn-on Delay Time: 33ns
Turn-off Delay Time: 21ns
Rise Time: 20ns
Fall Time: 31ns
Operating Temp Range: -40°C to +175°C
Gate Source Threshold: 5V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 4600pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications
The IRFS4227TRLPBF is a N-Channel Hexfet Power Mosfet. Operating temperature ranges between -40 to 175°C and is available in D2PAK-3 SMT Package.

Features:

  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175°C Operating Junction Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability
Read More...
Pricing Section
Global Stock:
25,600
USA:
25,600
On Order:Order inventroy details
50,400
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$672.00
USD
Quantity
Unit Price
800
$0.84
1,600
$0.825
2,400
$0.82
3,200
$0.815
4,000+
$0.80
Product Variant Information section