
Manufacturer Part #
IRLHS6376TRPBF
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
Product Specification Section
Infineon IRLHS6376TRPBF - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRLHS6376TRPBF - Technical Attributes
Attributes Table
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 63mΩ |
Rated Power Dissipation: | 1.5W |
Qg Gate Charge: | 2.8nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 3.6A |
Turn-on Delay Time: | 4.4ns |
Turn-off Delay Time: | 11ns |
Rise Time: | 11ns |
Fall Time: | 9.4ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 0.8V |
Input Capacitance: | 270pF |
Package Style: | PQFN 2 x 2 mm |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
4,000
$0.139
8,000
$0.137
16,000
$0.136
20,000
$0.135
60,000+
$0.132
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
PQFN 2 x 2 mm
Mounting Method:
Surface Mount