IRLHS6376TRPBF in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRLHS6376TRPBF

Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2512
Product Specification Section
Infineon IRLHS6376TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 63mΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 2.8nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 3.6A
Turn-on Delay Time: 4.4ns
Turn-off Delay Time: 11ns
Rise Time: 11ns
Fall Time: 9.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.8V
Input Capacitance: 270pF
Package Style:  PQFN 2 x 2 mm
Mounting Method: Surface Mount
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$556.00
USD
Quantity
Unit Price
4,000
$0.139
8,000
$0.137
16,000
$0.136
20,000
$0.135
60,000+
$0.132
Product Variant Information section