IRF1404LPBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF1404LPBF

Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262

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Mfr. Name: Infineon
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Product Specification Section
Infineon IRF1404LPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 0.004Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 160nC
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Features & Applications

International Rectifier has set an important precedent in MOSFET technology through the IRF1404L series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.

The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.

By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, Vishay offers unique technological solutions. Ideal for AC-DC servers, laptop adapters, and desktop power supplies, IR strives to meet ongoing customer demand backed by industry-leading quality.

Perfect for both commercial and industrial applications, the IRF1404L (this part is lead free) has the capacity to operate at 40 V within an operating temperature range of 175 degrees C. The net result translates to a lower resistance (RDS (on) = 4.0 mOhms). Repetitively avalanche rated, the IRF1404L is able to reduce power dissipation levels to approximately 50 watts. The IRFL provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-262 package format.

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