MJE243G in Box by onsemi | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

MJE243G

MJE Series 100 V 5 A NPN Complementary Silicon Power Plastic Transistor - TO-225

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi MJE243G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 100V
DC Current Gain-Min: 40
Package Style:  TO-225 (TO-126, SOT-32)
Features & Applications

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

Features:

  • High Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc
    • hFE = 40-200
    • hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product
    • fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    • ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available
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Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
4000
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$980.00
USD
Quantity
Unit Price
1
$0.275
125
$0.265
300
$0.26
1,250
$0.255
3,000+
$0.245
Product Variant Information section