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Manufacturer Part #
HUF75345S3ST
N-Channel 55 V 0.007 Ohm Surface Mount UltraFET Power Mosfet - TO-263AB
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263AB Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi HUF75345S3ST - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi HUF75345S3ST - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.007Ω |
| Rated Power Dissipation: | 325|W |
| Qg Gate Charge: | 275nC |
| Package Style: | TO-263AB |
| Mounting Method: | Surface Mount |
Features & Applications
The HUF75345S3ST is a N-Channel power MOSFET and it is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. .
Features:
- 75 A, 55 V
- Simulation models
- Temperature Compensated PSPICE® and SABER™ Models
- Thermal Impedance SPICE and SABER Models Available on the Web
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
Applications:
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
800
$3.75
1,600+
$3.70
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263AB
Mounting Method:
Surface Mount