Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
DMTH6005LPSQ-13
Single N-Channel 60 V 3.2 W 47.1 nC Silicon Surface Mount Mosfet - POWERDI5060-8
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Diodes Incorporated | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Std. Mfr. Pkg | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Diodes Incorporated DMTH6005LPSQ-13 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=DMTH6005LPSQ-13&field4=Diodes Incorporated&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/dmth6005lpsq-13-diodes-incorporated-C011931193
Diodes Incorporated DMTH6005LPSQ-13 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 10mΩ |
| Rated Power Dissipation: | 3.2W |
| Qg Gate Charge: | 47.1nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20.6A |
| Turn-on Delay Time: | 8.3ns |
| Turn-off Delay Time: | 22ns |
| Rise Time: | 9.4ns |
| Fall Time: | 8.9ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Height - Max: | 1.1mm |
| Length: | 5.15mm |
| Input Capacitance: | 2962pF |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
24 Weeks
Quantity
Unit Price
2,500
$0.706
5,000
$0.697
7,500
$0.691
10,000+
$0.684
Product Variant Information section
Available Packaging
Package Qty:
2500 per Std. Mfr. Pkg