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onsemi | FCPF11N60

Manufacturer Part #

FCPF11N60

Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FCPF11N60 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.38Ω
Rated Power Dissipation: 36W
Qg Gate Charge: 52nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 11A
Turn-on Delay Time: 34ns
Turn-off Delay Time: 119ns
Rise Time: 205ns
Fall Time: 120ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 16.3mm
Length: 10.67mm
Input Capacitance: 1148pF
Package Style:  TO-220F
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
956
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,160.00
USD
Quantity
Unit Price
1,000
$1.16
2,000
$1.15
3,000
$1.14
5,000+
$1.13
Product Variant Information section