Free shipping within the continental US over $50. Conditions apply
Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Manufacturer Part #
FDP047AN08A0
N-Channel 75 V 4.7 mOhm PowerTrench Mosfet TO-220AB
|
|
|||||||||||
|
|
|||||||||||
| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:800 per Tube Mounting Method:Through Hole |
||||||||||
| Date Code: | |||||||||||
onsemi FDP047AN08A0 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Part Status:
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDP047AN08A0&field4=onsemi&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/fdp047an08a0-on-semiconductor-3421559
-
https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDP047AN08A0&field4=onsemi&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/fdp047an08a0-on-semiconductor-3421559
onsemi FDP047AN08A0 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 4.7mΩ |
| Rated Power Dissipation: | 310|W |
| Qg Gate Charge: | 92nC |
| Mounting Method: | Through Hole |
Features & Applications
The FDP series cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
Available Packaging
Package Qty:
800 per Tube
Mounting Method:
Through Hole