Référence fabricant
FDP047AN08A0
N-Channel 75 V 4.7 mOhm PowerTrench Mosfet TO-220AB
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Tube Méthode de montage :Through Hole | ||||||||||
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onsemi FDP047AN08A0 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi FDP047AN08A0 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 4.7mΩ |
| Rated Power Dissipation: | 310|W |
| Qg Gate Charge: | 92nC |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, Fairchild offers unique technological solutions ideal for power supplies, mobile, lighting, motor computing, consumer and automotive applications. Innovation continues to be at the forefront of Fairchild’s state of the art technology, providing global energy-efficient solutions.
Perfect for commercial, automotive and industrial applications, the FDP047AN08A0 (this part is lead free) has the capacity to operate at 75V within an operating temperature range of 175 degrees C. The net result translates to a lower resistance (RDS (on) = 4.0 mOhms).
Repetitively avalanche rated, the FDP047AN08A0 is able to reduce power dissipation levels to approximately 310 watts. The FDP047AN08A0 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-220AB package format.
Emballages disponibles
Qté d'emballage(s) :
800 par Tube
Méthode de montage :
Through Hole