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onsemi | FDS6898AZ

Manufacturer Part #

FDS6898AZ

Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS6898AZ - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 14mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 16nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6898AZ is a 20 V 14 mΩ Dual N-Channel Logic Level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance

Features:

  • 9.4 A, 20 V
  • RDS(ON) = 14 mΩ @ VGS = 4.5 V
  • RDS(ON) = 18 mΩ @ VGS = 2.5 V
  • Low gate charge (16 nC typical)
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Applications:

  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,337.50
USD
Quantity
Unit Price
2,500
$0.535
5,000
$0.53
7,500
$0.525
10,000
$0.52
12,500+
$0.515
Product Variant Information section