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  6. FQD1N80TM

onsemi | FQD1N80TM

Manufacturer Part #

FQD1N80TM

N-Channel 800 V 20 Ohm Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FQD1N80TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 20Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 7.2nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD1N80TM is a 800 V 20 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 1.0 A, 800 V
  • RDS(on) = 20 Ω @VGS = 10 V
  • Low gate charge ( typical 5.5 nC)
  • Low Crss ( typical 2.7 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

 Applications:

  • Audio amplifier
  • High efficiency switching
  • DC/DC converters
  • DC motor control

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
1
Factory Lead Time:
27 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,000.00
USD
Quantity
Unit Price
1
$0.48
15
$0.45
75
$0.435
250
$0.425
1,250+
$0.40
Product Variant Information section