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Infineon | IMW120R350M1HXKSA1

Manufacturer Part #

IMW120R350M1HXKSA1

Single N-Channel 1200 V 4.7 A 60 W CoolSiC™ Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMW120R350M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 468mΩ
Rated Power Dissipation: 60W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 4.7A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 11.4ns
Rise Time: 0.7ns
Fall Time: 21.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 182pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
240
Multiple Of:
240
Total
$552.00
USD
Quantity
Unit Price
240
$2.30
480
$2.28
720
$2.27
960
$2.26
1,200+
$2.24
Product Variant Information section