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Manufacturer Part #
IPB027N10N3GATMA1
Single N-Channel 100 V 4.5 mOhm 206 nC OptiMOS™ Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IPB027N10N3GATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
08/15/2025 Details and Download
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Part Status:
Active
Active
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Infineon IPB027N10N3GATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 4.5mΩ |
| Rated Power Dissipation: | 300W |
| Qg Gate Charge: | 155nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 120A |
| Turn-on Delay Time: | 34ns |
| Turn-off Delay Time: | 84ns |
| Rise Time: | 58ns |
| Fall Time: | 28ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.7V |
| Technology: | OptiMOS |
| Input Capacitance: | 11100pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
1,000
$1.73
2,000
$1.72
3,000
$1.71
5,000+
$1.69
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount