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Infineon | IPB030N08N3GATMA1

Manufacturer Part #

IPB030N08N3GATMA1

Single N-Channel 80 V 3 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB030N08N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 214W
Qg Gate Charge: 88nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 160A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 45ns
Rise Time: 79ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 6100pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,840.00
USD
Quantity
Unit Price
1,000
$1.84
2,000
$1.83
3,000
$1.82
5,000+
$1.80
Product Variant Information section