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Manufacturer Part #

IPB200N25N3GATMA1

Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB200N25N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 64nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 64A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 45ns
Rise Time: 20ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Height - Max: 4.4mm
Length: 10mm
Input Capacitance: 5340pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,610.00
USD
Quantity
Unit Price
1,000
$3.61
2,000+
$3.57
Product Variant Information section