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Manufacturer Part #
IPP041N12N3GXKSA1
Single N-Channel 120 V 4.1 mOhm 158 nC OptiMOS™ Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IPP041N12N3GXKSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
Part Status:
Active
Active
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Infineon IPP041N12N3GXKSA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 120V |
| Drain-Source On Resistance-Max: | 4.1mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 158nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
14 Weeks
Quantity
Unit Price
50
$2.28
200
$2.24
500
$2.22
1,250
$2.19
2,000+
$2.16
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole