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Manufacturer Part #

IPP60R190E6XKSA1

Single N-Channel 600 V 190 mOhm 63 nC CoolMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP60R190E6XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 151|W
Qg Gate Charge: 63nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$685.00
USD
Quantity
Unit Price
500
$1.37
1,000
$1.36
1,500
$1.35
2,500
$1.34
5,000+
$1.33
Product Variant Information section