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Manufacturer Part #
IPW60R045CPFKSA1
Single N-Channel 650 V 45 mOhm 150 nC CoolMOS™ Power Mosfet - TO-247-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2202 | ||||||||||
Infineon IPW60R045CPFKSA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPW60R045CPFKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/ipw60r045cpfksa1-infineon-3060202
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPW60R045CPFKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/ipw60r045cpfksa1-infineon-3060202
Infineon IPW60R045CPFKSA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 45mΩ |
| Rated Power Dissipation: | 431|W |
| Qg Gate Charge: | 150nC |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole