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Manufacturer Part #
IRLI640GPBF
N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-220FP (TO-220FPAB) Mounting Method:Flange Mount |
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Vishay IRLI640GPBF - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLI640GPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irli640gpbf-vishay-7396195
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRLI640GPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/discretes--transistors--mosfets/irli640gpbf-vishay-7396195
Vishay IRLI640GPBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.18Ω |
| Rated Power Dissipation: | 40|W |
| Qg Gate Charge: | 66nC |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220FP (TO-220FPAB)
Mounting Method:
Flange Mount