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onsemi | NTJD4152PT1G

Manufacturer Part #

NTJD4152PT1G

Dual P-Channel 20 V 215 mOhm 272 mW Surface Mount Small Signal MOSFET SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2543
Product Specification Section
onsemi NTJD4152PT1G - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 215mΩ
Rated Power Dissipation: 0.27|W
Qg Gate Charge: 2.2nC
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The NTJD4152PT1G is a part of NTJD4152P series dual P−channel MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.

Features:

  • Leading Trench Technology for Low RDS(ON) Performance
  • Small Footprint Package (SC70−6 Equivalent)
  • ESD Protected Gate
  • This is a Pb−Free Device

Applications:

  • Load/Power Management
  • Charging Circuits
  • Load Switching
  • Cell Phones, Computing, Digital Cameras, MP3s and PDAs
Pricing Section
Global Stock:
21,000
USA:
21,000
On Order:Order inventroy details
24,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
45 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$321.00
USD
Quantity
Unit Price
3,000
$0.107
9,000
$0.105
15,000
$0.104
30,000
$0.103
60,000+
$0.101
Product Variant Information section