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Manufacturer Part #

SI7942DP-T1-E3

Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7942DP-T1-E3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.049Ω
Rated Power Dissipation: 1.4|W
Qg Gate Charge: 24nC
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Features & Applications
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.  The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.The Si7942DP features a new low thermal resistance PowerPAK® and TrenchFET® Power MOSFET Technology.  This 100V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 49 milliohms at a 100-V gate drive voltage. Specifically designed for synchronous buck shoot-through resistance and optimized for primary side switches.
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,500.00
USD
Quantity
Unit Price
3,000+
$1.50
Product Variant Information section