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Manufacturer Part #

SIS443DN-T1-GE3

MOSFET -40V .0117OHM@10V 35A P-CH G-III

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIS443DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 11.7mΩ
Rated Power Dissipation: 3.7|W
Qg Gate Charge: 90nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13.3A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 48ns
Rise Time: 10ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.3V
Height - Max: 1.12mm
Length: 3.3mm
Input Capacitance: 4370pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,040.00
USD
Quantity
Unit Price
3,000
$0.68
6,000
$0.67
9,000
$0.665
12,000+
$0.66
Product Variant Information section