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Infineon | SPD08P06PGBTMA1

Manufacturer Part #

SPD08P06PGBTMA1

Single P-Channel 60 V 300 mOhm 10 nC SIPMOS® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon SPD08P06PGBTMA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 300mΩ
Rated Power Dissipation: 42|W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.83A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 48ns
Rise Time: 46ns
Fall Time: 14ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 335pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$725.00
USD
Quantity
Unit Price
2,500
$0.29
5,000
$0.285
12,500
$0.28
25,000+
$0.275
Product Variant Information section