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Manufacturer Part #

SPD30P06PGBTMA1

Single P-Channel 60 V 75 mOhm 32 nC SIPMOS® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2440
Product Specification Section
Infineon SPD30P06PGBTMA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 75mΩ
Rated Power Dissipation: 125|W
Qg Gate Charge: 32nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,450.00
USD
Quantity
Unit Price
2,500
$0.58
5,000
$0.575
7,500
$0.57
10,000
$0.565
12,500+
$0.555
Product Variant Information section